AVS 49th International Symposium
    Electronic Materials and Devices Monday Sessions
       Session EL+SC+MI-MoM

Invited Paper EL+SC+MI-MoM7
Hydrogen Removal Mechanisms from Gallium Nitride

Monday, November 4, 2002, 10:20 am, Room C-107

Session: Semiconductors
Presenter: B.D. Thoms, Georgia State University
Authors: B.D. Thoms, Georgia State University
Y. Yang, Georgia State University
J. Lee, Georgia State University
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The reaction between hydrogen and GaN is important since hydrogen is often present (sometimes in abundance) during growth and processing and since it produces significant effects. For instance, the effect of hydrogen on the efficacy of Mg dopants has been widely reported and both annealing and electron exposures have been used to remove hydrogen. In addition, recombinative desorption of hydrogen is an important part of many dry etching processes. Removal of hydrogen requires both the transport of hydrogen to the surface and desorption from the surface. In this talk, the authors will discuss characterization of surface and subsurface hydrogen on GaN(0001) and its removal by annealing and by electron exposure.