| AVS 49th International Symposium | |
| Applied Surface Science | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | AS-WeM1 Verification of Silicon Native Oxide Growth Models using Spectroscopic Ellipsometry D.W. Crunkleton, V. Pawar, Z. Song, R.D. Geil, B.R. Rogers, Vanderbilt University |
| 8:40am | AS-WeM2 Measurement of Semi-Isolated Poly-Silicon Gate Structure with Optical Critical Dimension Technique D. Shivaprasad, J. Hu, M. Tabet, R. Hoobler, Nanometrics, Inc., W. Liu, H. Sasano, C. Bencher, D. Mui, Applied Materials |
| 9:00am | AS-WeM3 Invited Paper Progress in Spectroscopic Ellipsometry: Applications from Vacuum Ultraviolet to Infrared J.N. Hilfiker, C.L. Bungay, R.A. Synowicki, T.E. Tiwald, C.M. Herzinger, B. Johs, G. Pribil, J.A. Woollam, J. A. Woollam Co., Inc. |
| 9:40am | AS-WeM5 Application of Bragg Light Scattering Method for Studying of Spatial Dispersion Effects in Ferroelectrics F.R. Akhmedzhanov, Samarkand State University, Uzbekistan |
| 10:00am | AS-WeM6 Titanium Dioxide Thin Film Growth on Si(111) by Chemical Vapor Deposition of Titanium(IV) Isopropoxide A. Sandell, Uppsala University, Sweden, M.P. Andersson, Lund University, Sweden, Y. Alfredsson, Uppsala University, Sweden, M.K.-J. Johansson, Lund University, Sweden, J. Schnadt, H. Rensmo, H. Siegbahn, Uppsala University, Sweden, P. Uvdal, Lund University, Sweden |
| 10:20am | AS-WeM7 Nitrided Silicon-Silicon Dioxide Interface: Electrical and Physico-Chemical Characterization by Complementary Surface Techniques L. Vanzetti, E. Iacob, M. Barozzi, D. Giubertoni, M. Bersani, M. Anderle, ITC-irst, Italy, P. Bacciaglia, B. Crivelli, M.L. Polignano, M.E. Vitali, ST Microelectronics, Italy |
| 10:40am | AS-WeM8 Accurate SIMS analysis of SiON Films S. Miwa, H. Kobayashi, SONY Corp., Japan, K. Nakajima, K. Kimura, Kyoto University, Japan |