AVS 49th International Symposium
    Applied Surface Science Wednesday Sessions
       Session AS-WeM

Paper AS-WeM1
Verification of Silicon Native Oxide Growth Models using Spectroscopic Ellipsometry

Wednesday, November 6, 2002, 8:20 am, Room C-106

Session: Optical Methods and High-k Dielectrics Characterization
Presenter: D.W. Crunkleton, Vanderbilt University
Authors: D.W. Crunkleton, Vanderbilt University
V. Pawar, Vanderbilt University
Z. Song, Vanderbilt University
R.D. Geil, Vanderbilt University
B.R. Rogers, Vanderbilt University
Correspondent: Click to Email
The need for atomically clean silicon surfaces in microelectronics processing has lead to several proposed kinetic models of native oxide growth on silicon. In this work, we present new data sets from which these models are analyzed. We have measured the room temperature silicon dioxide growth on Si (100) samples pre-treated with various fluoride, chloride, and hydroxide base etchants. The oxide thickness is determined with multiangle spectroscopic ellipsometry. Many of the proposed kinetic models fit the trends in our data well; yet several tend to underestimate the final native oxide thickness.