AVS 49th International Symposium
    Thin Films Wednesday Sessions
       Session TF-WeP

Paper TF-WeP16
Ti Target Characteristics of Medium Frequency Reactive Sputtering: Process Modeling Improvement and Experimental Verification

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Poster Session
Presenter: Lai Zhao, Tsinghua University, China
Authors: Lai Zhao, Tsinghua University, China
S. Xu, HIVAC Technology (Group) Co. Ltd., China
C. Fan, HIVAC Technology (Group) Co. Ltd., China
W. Gao, HIVAC Technology (Group) Co. Ltd., China
X. Hou, Tsinghua University, China
Liangzhen Cha, Tsinghua University, China
Correspondent: Click to Email
Deposition of TiO2 with reactive dual magnetron sputtering (DMS) is difficult to control due to its critical transition region of hysteresis curve caused by the high metallicity of Ti target. To stabilize the sputtering process, electrical characteristics of the Ti target is investigated in an on-line experiment. An improvement to the sputtering process modeling developed by S.Berg is proposed based on these experimental data. To better explain the hysteresis curve, it is found that the accumulation of positive argon ion charges on the oxidized target surface affects the electrical field and argon ion incident current density. Hence, the coverage of oxide component on the target will change correspondently. The changing argon ion current density due to charge accumulation is introduced to the equations. The simulated result fits well with the measured hysteresis curve.