AVS 49th International Symposium
    Thin Films Wednesday Sessions
       Session TF-WeA

Paper TF-WeA8
Theoretical and Experimental Investigation of Atomic Layer Deposition of Copper(I) Oxide

Wednesday, November 6, 2002, 4:20 pm, Room C-101

Session: Atomic Layer Deposition - Applications of ALD
Presenter: T. Törndahl, Uppsala University, Sweden
Authors: T. Törndahl, Uppsala University, Sweden
M. Ottosson, Uppsala University, Sweden
K.M.E. Larsson, Uppsala University, Sweden
J.-O. Carlsson, Uppsala University, Sweden
Correspondent: Click to Email
Atomic Layer Deposition (ALD) of copper(I) oxide from copper(I) chloride and water has been investigated both theoretically and experimentally. The theoretical modeling was conducted on the reconstructed non-polar (111) surface of copper(I) oxide, using gradient corrected density functional calculations. Among the studied process steps related to the film growth were copper(I) chloride adsorption on different copper(I) oxide (111) surface sites and reactivity against water. The experimental studies have been carried out from 350 °C, were the films start to grow, up to 700 °C, where the deposition rate starts to decrease. The texture of the films was controlled to a large extent by the substrates. On fused silica no texture was observed while on aluminium oxide, (102) oriented, films with strong (110) texture were obtained. The experimental results will be discussed in connection to the theoretical modeling of the deposition process.