AVS 49th International Symposium
    Thin Films Wednesday Sessions
       Session TF-WeA

Paper TF-WeA3
Examination of New ALD Processes for Microelectronics

Wednesday, November 6, 2002, 2:40 pm, Room C-101

Session: Atomic Layer Deposition - Applications of ALD
Presenter: M. Ritala, University of Helsinki, Finland
Authors: M. Ritala, University of Helsinki, Finland
K. Kukli, University of Helsinki, Finland
T. Aaltonen, University of Helsinki, Finland
P. Alen, University of Helsinki, Finland
M. Vehkamäki, University of Helsinki, Finland
T. Hänninen, University of Helsinki, Finland
T. Hatanpää, University of Helsinki, Finland
R. Matero, University of Helsinki, Finland
A. Niskanen, University of Helsinki, Finland
A. Rahtu, University of Helsinki, Finland
V. Pore, University of Helsinki, Finland
M. Leskelä, University of Helsinki, Finland
Correspondent: Click to Email
During the past years the atomic layer deposition (ALD) method has gained a lot of interest among semiconductor industry as a potential future manufacturing technology. Though the method has been widely examined by several groups, the studies have mainly focused to only a few processes: Al(CH@sub 3@)@sub 3@ - H@sub 2@O, ZrCl@sub 4@ - H@sub 2@O, HfCl@sub 4@ - H@sub 2@O and TiCl@sub 4@ - NH@sub 3@. While the Al(CH@sub 3@)@sub 3@ - H@sub 2@O process can be considered as a nearly ideal ALD process, the others have some limitations and drawbacks, thereby leaving room for improvement and calling for new chemical approaches for a deposition of the corresponding materials. In addition, there is a whole range of other materials, like metals and ferroelectrics, for which efficient ALD processes should be developed. In this presentation, our recent results on developing new ALD processes for microelectronic applications will be presented.