AVS 49th International Symposium
    Thin Films Friday Sessions
       Session TF-FrM

Paper TF-FrM5
In-Situ Infrared Chemometrics During BPSG Dielectric Thin Film Growth

Friday, November 8, 2002, 9:40 am, Room C-101

Session: Fundamentals of Thin Flm Growth
Presenter: L.D. Flores, University of California, San Diego
Authors: L.D. Flores, University of California, San Diego
J.E. Crowell, University of California, San Diego
Correspondent: Click to Email
Dielectric thin film growth of boron and phosphorus doped silicate glass (BPSG) has been studied using the atmospheric pressure reaction between trimethylborate (TMB), trimethylphosphite (TMPi), tetraethoxysilane (TEOS) and ozone (O@sub3@). In-situ gas-phase transmission FTIR spectroscopy was performed between 400-600°C by probing the variable region between the injector, heated Si wafer and the exhaust zones. Experimental methods for reliable quantitative infrared measurement of gaseous species in the CVD environment will be demonstrated. These studies involve low temperature ozone initiated deposition of dielectric thin films using a new atmospheric-pressure chemical vapor deposition (APCVD) reactor utilizing a commercial monoblok vent assembly. We quantify N@sub 2@ / O@sub 2@ / O@sub 3@ reaction products from BPSG precursors while varying the reactant ratios and probing as a function of infrared beam position within the reactor. The products produced during the reaction of TEOS and ozone are compared to those products measured during dopant reaction and incorporation from TMB and/or TMPi addition. Absorbances due to isolated silanol groups (3738 cm@super -1@) are treated using PCA (principle component analysis) techniques as a function of temperature and input reagent concentration to determine formation kinetics. The silanol groups and their reactions with boron and phosphorus dopant sources have been investigated in order to clarify their role in the oxidation process and to determine the reaction mechanism. Pathways involved in the hydrolysis and polycondensation process leading to siloxane formation and network film growth will be presented.