AVS 49th International Symposium
    Surface Science Thursday Sessions
       Session SS+EL-ThM

Paper SS+EL-ThM6
Ga Surface Segregation in ErAs (100)/GaAs (100)

Thursday, November 7, 2002, 10:00 am, Room C-110

Session: Structure of Semiconductor Surfaces & Interfaces
Presenter: H.K. Jeong, University of Nebraska-Lincoln
Authors: H.K. Jeong, University of Nebraska-Lincoln
T. Komesu, University of Nebraska-Lincoln
C.-S. Yang, University of Nebraska-Lincoln
P.A. Dowben, University of Nebraska-Lincoln
B.D. Schultz, University of Minnesota
C.J. Palmstrom, University of Minnesota
Correspondent: Click to Email
Surface segregation has now been characterized by angle resolved x-ray photoemission for NiMnSb, a variety of perovskites, and a number of binary alloys. Using angle-resolved x-ray photoemission spectroscopy (ARXPS), the surface composition of the sample can be roughly established since the effective probing depth is shorter at large emission angles with respect to the surface normal. Epitaxial thin films of the rare earth pnictide ErAs(100) can be grown on GaAs(100), but at elevated temperatures the ErAs film degrades. Ga segregation through the ErAs to the surface has been identified by angle-resolved X-ray photoemission spectroscopy, following extensive annealing. The angle-resolved XPS data indicates that the segregation of Ga is extensive throughout the ErAs thin film and is not restricted just to the surface layer.