AVS 49th International Symposium
    Surface Science Thursday Sessions
       Session SS+EL-ThM

Paper SS+EL-ThM11
CRN Models of Covalent Amorphous Materials and Their Interfaces

Thursday, November 7, 2002, 11:40 am, Room C-110

Session: Structure of Semiconductor Surfaces & Interfaces
Presenter: D. Yu, The University of Texas at Austin
Authors: D. Yu, The University of Texas at Austin
G.S. Hwang, The University of Texas at Austin
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Understanding the structural properties of covalent amorphous (semiconductor and dielectric) materials and their interfaces as well as defect-dopant dynamics in the disordered systems is an outstanding problem of great importance for microelectronic and optoelectronic applications. Significant advances in Continuous Random Network (CRN) models have made it possible to generate the amorphous and interface structures that are in good agreement with experiments. This further allows us to address the behaviors of defects and dopants in the disordered structures. In this talk we will present our newly developed CRN models and some recent results on i) the diffusion and clustering dynamics of vacancies and self-interstitials in a-Si and the amorphous-crystalline interface, ii) the structures of a very thin amorphous SiO@sub 2@ layer and its interfaces with Si, and iii) thermal stability of Si/Ge nanoclusters in SiO@sub 2@.