AVS 49th International Symposium
    Organic Films and Devices Wednesday Sessions
       Session OF+EL-WeP

Paper OF+EL-WeP8
Polyatomic Ion Deposition of Thiophenic Thin Films

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Organic Films and Devices
Presenter: Y. Choi, University of Illinois at Chicago
Authors: Y. Choi, University of Illinois at Chicago
E.R. Fuoco, University of Illinois at Chicago
L. Hanley, University of Illinois at Chicago
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Oligo- and polythiophenes are utilized as conducting polymers in many applications. Polyatomic ion deposition at ion impact energies below 200 eV is an effective method for the growth of thin organic films on polymer, metal, and semiconductor surfaces.@footnote 1@ We demonstrate here the growth of thiophenic thin films on aluminum and silicon substrates by mass-selected <200 eV C@sub 4@H@sub 4@S@super +@ ion beams. Thiophenic films are also grown by non-mass selected ion beams containing <200 eV C@sub 4@H@sub 4@S@super +@ and fragment ions. Our non-mass selected ion deposition method permits rapid film growth over wide substrate areas and it is described here for the first time. X-ray photoelectron spectroscopy and atomic force microscopy are used to compare the film chemistry and morphology for the two methods. Oxidation of the films during aging in air is observed. @FootnoteText@@footnote 1@L. Hanley and S.B. Sinnott, Surf. Sci. 500 (2002) 500.