AVS 49th International Symposium
    Organic Films and Devices Wednesday Sessions
       Session OF+EL-WeP

Paper OF+EL-WeP5
XPS Studies of Initial Stage of Conducting Polymer Film Growth on Si Substrate

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Organic Films and Devices
Presenter: S.T. Takemura, Kanto Gakuin University, Japan
Authors: H.K. Kato, Kanto Gakuin University, Japan
S.T. Takemura, Kanto Gakuin University, Japan
H.M. Makihara, Kansai Research Institute, Japan
Correspondent: Click to Email
Conducting polymer polythiophene (PT) film growth on Si substrate was investigated by XPS. PT/Si interface fabricated by electrochemical method was closely investigated by analyzing the core-level energies and spectral profiles of the atomic components. A t the initial stage of electrochemical polymer growth, affinity between a deposited polymer PT film and Si substrate was strong compared with the case of PT film growth on ITO substrate expecting bondings between polymer chains and Si substrate layers. S p ectral profiles of Si core-level spectra showed that both Si 2s and 2p spectra were basically composed of different Gaussian components correspond to different valence states of Si in contrast to the core-level spectra of non-deposited Si substrate. Th e l ower binding energy peaks (LS1 and LS2) observed in Si 2p spectra of PT/Si correspond to the Si states with strong interaction between Si and PT. The peak height of LS1 slightly increases and LS2 drastically grows in the case of PT polymer growth on S i su bstrate. The C 1s core-level spectrum was composed of a higher energy component and a lower energy component originated from the polymer backbone and oxidized Si layers, respectively. Strong affinity between a deposited polymer PT film and Si substrate and variation of the XPS spectral profile suggest that Si-C and Si-F bondings are created at the PT/Si interface.