Several groups have recently reported growing nanowires of rare earth (RE) metal silicides on the Si(001) surface.@footnote 1,2,3@ These nanowires grow by self assembly during the deposition of the RE metal on the Si(001) surface. They have many desirable properties such as crystalline structure, metallic conduction, and micron scale length. Recent STM and STS results on Dy and Ho silicide nanowires will be shown. Metal coverage, growth temperature, substrate step density, and post growth annealing duration all have strong effects on the nanowire morphology and surface density. Macroscopic transport measurements on nanowire networks will also be discussed. @FootnoteText@ @footnote 1@ C. Preisenberger et al, J. Phys. D 31,L43 (1998) @footnote 2@ Y. Chen et al, Appl. Phys. Lett. 76, 4004 (2000) @footnote 3@ J. Nogami et al, Phys. Rev. B 63, 233305 (2001).