AVS 49th International Symposium
    Nanometer Structures Wednesday Sessions
       Session NS+EL-WeA

Paper NS+EL-WeA6
Nanostructuring of Hydrogenated Silicon Surfaces by Electron Beam Irradiation of Self-assembled Hydroxybiphenyl Monolayers

Wednesday, November 6, 2002, 3:40 pm, Room C-207

Session: Nanolithography & Self Assembly
Presenter: A. Gölzhäuser, Universität Heidelberg, Germany
Authors: A. Küller, Universität Heidelberg, Germany
W. Geyer, Universität Heidelberg, Germany
V. Stadler, Universität Heidelberg, Germany
T. Weimann, Physikalisch Technische Bundesanstalt, Germany
W. Eck, Universität Heidelberg, Germany
A. Gölzhäuser, Universität Heidelberg, Germany
Correspondent: Click to Email
A new species of aromatic self assembled monolayers, hydroxy biphenyl, are formed on hydrogen terminated silicon and used as a negative tone electron beam resist. The formation of the monolayer and the electron induced modifications are observed by X-ray photoelectron spectroscopy. Nanometer patterns in the molecular layer were defined by low energy electron proximity printing as well as via conventional e-beam lithography. The patterns are transferred into silicon by a wet chemical etching process in KOH. The fabrication of patterns with lateral dimensions below 20 nm is demonstrated.