AVS 49th International Symposium
    Manufacturing Science and Technology Monday Sessions
       Session MS+SE-MoM

Paper MS+SE-MoM2
Integrated CD Metrology for Poly Si Etching

Monday, November 4, 2002, 8:40 am, Room C-109

Session: In-Situ Monitoring and Metrology for Coating Growth and Manufacturing
Presenter: G.P. Kota, Lam Research Corporation
Authors: G.P. Kota, Lam Research Corporation
C. Lee, Lam Research Corporation
T. Dziura, KLA-Tencor Corporation
A. Levy, KLA-Tencor Corporation
Correspondent: Click to Email
Advanced process control (APC) is gaining widespread use because of the costs associated with 300mm wafer processing and because of the stringent control required for CD and profile due to the shrinkage of critical feature dimension. APC can be used in Feed forward, Feed back and Fault detection control modes. The KT metrology module called iSpectra is integrated on to the Lam 2300 Versys etch platform. This modular design allows for real time APC. Integrated metrology also enhances the overall equipment efficiency. A comparison of iSpectra, CD-SEM, and x-SEM results will be presented. iSpectra shows good correlation to the CDSEM measurements as well as x-SEM profiles. In addition, iSpectra repeatability is superior to conventional methods such as CD-SEM. It is common knowledge that 193nm PR shrinks during CDSEM measurements due to exposure of the PR to e-beam. This shrinkage has been measured to be up to 17nm after about 30 repeated measurements on the CDSEM. In comparison, the iSpectra measurement technique results in minimal CD shrinkage.