AVS 49th International Symposium
    Manufacturing Science and Technology Monday Sessions
       Session MS+SE-MoM

Paper MS+SE-MoM1
Product Development and Yield Enhancement through Failure Analysis of Integrated Circuits with Scanning Capacitance Microscopy

Monday, November 4, 2002, 8:20 am, Room C-109

Session: In-Situ Monitoring and Metrology for Coating Growth and Manufacturing
Presenter: P. Tangyunyong, Sandia National Laboratories
Authors: P. Tangyunyong, Sandia National Laboratories
C.Y. Nakakura, Sandia National Laboratories
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Scanning capacitance microscopy (SCM) has become a widely used metrology tool in the microelectronics industry due to its ability to measure two-dimensional free carrier profiles with nanometer-scale resolution. To date, SCM has been used primarily to characterize source/drain formation by imaging cross-sectioned, metal-oxide-semiconductor field effect transistors (MOSFETs). We have extended the role of SCM in our Fab from an off-line research instrument to a routinely-used failure analysis tool, active in providing feedback in new product development, process validation, and yield enhancement. The SCM measurement can be performed on any two-dimensions of the sample, thus providing unique information that cannot be obtained with other analysis techniques. This information has been instrumental in helping to identify several yield-limiting defects in our CMOS device product line. In addition, SCM measurements are performed in-house with quick turnaround, yielding a considerable advantage over off-site analysis techniques, such as secondary ion mass spectroscopy. The methodology for performing both top-down (parallel to the wafer surface) and cross-sectional SCM measurements will be presented. We will show, in detail, several examples of how SCM information has been used to identify the root causes of device failures and discuss some of the corrective actions taken to reduce defects and improve yield. @FootnoteText@ This work was performed at and supported by Sandia National Laboratories under DOE contract DE-AC04-94AL85000. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation for the United States Department of Energy.