Silicon nanotechnology can now manufacture logic that incorporates more than 43 million Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) into a monolithic integrated circuit (IC). Some of these MOSFETs have a gate or control electrode that is only 130nm long with a gate oxide that insulates the control electrode from the current-carrying channel that is as thin as 1.7nm. Moreover, we have recently shown that further miniaturization is practical. We have produced nanometer-scale MOSFETs or nano-transistors with a gate electrode as shorter than 40nm and a gate oxide thinner 1nm. Inexorably, within the next ten years (according to the ITRS roadmap) the electronics industry is expected to integrate over a billion nanotransistors into a ~3-10cm2 area chip, packing about 5-10 nano-transistors/mm2. Integration on this scale, along with the facility for nanofabrication, will enabled new types of ICs. For example, we will show that it is now possible to fabricate ICs so small that they could inserted inside a living cell. Since the cell is the key to biology, such a chip combined with sensors could provide unprecedented access to it. We will also show how silicon nanofabrication technology can be used to produce sensors out of nanometer-scale pores (~2nm in diameter) in an ultra-thin glass membrane (~2nm thick), which function like ion channels in the membrane of a living cell. Such devices may ultimately be used in proteomics or for rapid sequencing of minute amounts of DNA to discover the genetic origin of a disease.