AVS 49th International Symposium
    Electronic Materials and Devices Tuesday Sessions
       Session EL+SC-TuA

Paper EL+SC-TuA1
Active-Device Scanning Voltage Microscopy Studies on a Forward and Reverse Biased InP pn Junction Sample

Tuesday, November 5, 2002, 2:00 pm, Room C-107

Session: Semiconductor Characterization
Presenter: ST.J. Dixon-Warren, Nortel Networks, Canada
Authors: ST.J. Dixon-Warren, Nortel Networks, Canada
R. Dworschak, Nortel Networks, Canada
G. Este, Nortel Networks, Canada
AJ. SpringThorpe, Nortel Networks, Canada
J.K. White, Nortel Networks, Canada
D. Ban, University of Toronto, Canada
E.H. Sargent, University of Toronto, Canada
Correspondent: Click to Email
Active-Device Scanning Voltage Microscopy (SVM) is a new Scanning Probe Microscopy (SPM) technique in which a two-dimensional voltage map is obtained on the cross-section of a biased semiconductor sample. The voltage is measured using a very high impedance voltmeter that is connected to a conductive doped-diamond coated SPM tip. Recently obtained results on a molecular beam epitaxy (MBE) grown InP pn junction sample will be reported, under both forward and reverse bias conditions. The results are compared to those obtained with Scanning Spreading Resistance Microscopy (SSRM) measurements under zero bias on the same sample. The SVM and SSRM results will be discussed in terms of the semi-classical model of the pn junction. The physics of the SVM measurement process will also be discussed. Finally, the results obtained on the simple pn junction sample will be compared with those obtained on more complex samples, such as InP based ridge waveguide and buried heterostructure laser samples under forward bias.