AVS 49th International Symposium
    Applied Surface Science Tuesday Sessions
       Session AS-TuP

Paper AS-TuP16
High Spatial Resolution XPS Analysis of Si Samples Prepared using the FIB Lift-out Technique

Tuesday, November 5, 2002, 5:30 pm, Room Exhibit Hall B2

Session: Topics in Applied Surface Science
Presenter: J. Fenton, Kent State University
Authors: J. Fenton, Kent State University
A. Ferryman, Kent State University
J.E. Fulghum, Kent State University
L.A. Giannuzzi, University of Central Florida
F.A. Stevie, North Carolina State University
Correspondent: Click to Email
The goal of this project is to assess Ga+ contamination on Si in order to elucidate artifacts due to focused ion beam (FIB) milling. The FIB instrument has witnessed an increase in use from machining and processing to specimen preparation. However, the surface chemistry alterations, gallium implantation damage region, and residual effects of FIB sample preparation are not well understood. It is imperative that we understand the chemical and morphological alterations that this instrument may cause to its target, if correct interpretations regarding structure/property relationships of materials are to be made. FIB is currently most often used to prepare samples for microscopic techniques such as TEM, which have a higher spatial resolution than most surface analysis methods. Improvements in imaging and small area analyses have made X-ray photoelectron spectroscopy (XPS) an increasingly useful characterization technique for such samples, however. Utilizing spectra-from-images capabilities enables the acquisition of spectra from areas of ~ 1 micron in diameter, allowing for surface chemical characterization of FIB lift-out samples. This poster will discuss the use of XPS imaging and small area spectroscopy to characterize surface oxidation and Ga contamination in Si (100) prepared by the FIB lift-out method.