AVS 49th International Symposium
    Applied Surface Science Tuesday Sessions
       Session AS-TuP

Paper AS-TuP13
Sample Topography Developed by Sputtering in Cameca Instruments: an AFM and SEM Study

Tuesday, November 5, 2002, 5:30 pm, Room Exhibit Hall B2

Session: Topics in Applied Surface Science
Presenter: E. Iacob, ITC-irst, Italy
Authors: E. Iacob, ITC-irst, Italy
M. Bersani, ITC-irst, Italy
A. Lui, ITC-irst, Italy
L. Vanzetti, ITC-irst, Italy
D. Giubertoni, ITC-irst, Italy
M. Barozzi, ITC-irst, Italy
M. Anderle, ITC-irst, Italy
Correspondent: Click to Email
Secondary ion mass spectrometry (SIMS) is based on ion sputtering. Removing atoms layer by layer we can get a satisfactory depth distribution analysis. To obtain a suitable depth resolution for semiconductors applications low impact energy and glancing angles are mandatory. However high dose ion bombardments results in a change of surface topography causing problems in quantitative analysis and depth resolution deterioration. The morphological artefacts on the crater surface, depend on various SIMS sputtering parameters and samples conditions. The induced morphology by ion sputtering require detailed characterization. In this work we analysed, by using of Atomic Force (AFM) and Scanning Electron (SEM) Microscopies, the morphological effects induced by ion bombardment on various samples: monocristalline Si <100>, polycrystalline Si and amorphous silicon oxide. Topographic irregularities, induced by SIMS analysis are studied showing the dependence on sputtering condition. We used different instruments (Cameca Sc-Ultra and Cameca 4f) comparing the effect of analytical conditions as impact angle, incidental ion species, ion dose and impact energy. The goal is to determine best parameters to minimize roughness and surface irregularities considering or not the employment of the sample stage rotation.