AVS 49th International Symposium
    Applied Surface Science Tuesday Sessions
       Session AS-TuP

Paper AS-TuP10
Impurity Dopant Profile Measurement and its Quantitative Analysis using Nano Capacitance-Voltage (NCV) Method

Tuesday, November 5, 2002, 5:30 pm, Room Exhibit Hall B2

Session: Topics in Applied Surface Science
Presenter: E.-S. Kang, Chung-Ang University, Korea
Authors: E.-S. Kang, Chung-Ang University, Korea
H.-J. Hwang, Chung-Ang University, Korea
G.-Y. Lee, Samchok National University, Korea
Correspondent: Click to Email
It is well known that commercial scanning capacitance microscope (SCM) systems are not easy to obtain the local dC/dV curves over the dopant range of 1020 - 1018cm-3 because of smaller depleted volume charges generated under the surface by SCM tip size. This problem will prevent us from acquiring quantitative carrier depth information correctly. To do this, it needs the developing of robust capacitance sensor and the more powerful SCM modeling. For the more accurate inverted dopant profile in higher dopant area, therefore, we have added some factors such as SCM tip/sample interaction and fully calculated volume charges into previous modeling parameters. In addition, we have developed a new capacitance sensor operating about 1.7GHz frequency bandwidth. The capacitance sensor used in commercial SCM has been using the amplitude modulation method. However, we have taken the frequency modulation technique for increasing the accuracy in higher dopant area. This new capacitance sensor consists of a voltage-controlled oscillator with controlled voltage, a microstrip resonator, and a RF mixer IC and PLL (Phased-Lock Loop) for detecting the capacitance variations. We have called this system Nano Capacitance-Voltage (NCV). This technique will bring a greater enhancement for the current SCM sensitivity and performance.