AVS 49th International Symposium
    Applied Surface Science Monday Sessions
       Session AS-MoM

Paper AS-MoM11
Study of Electron Beam Excited Plasma SNMS for High Detection Sensitivity

Monday, November 4, 2002, 11:40 am, Room C-106

Session: SIMS
Presenter: T. Noguchi, The Graduate University for Advanced Studies, Japan
Authors: T. Noguchi, The Graduate University for Advanced Studies, Japan
S. Kato, KEK & The Graduate University for Advanced Studies, Japan
Correspondent: Click to Email
SNMS has been developed for years to obtain precise depth profiling and high quantificability conquering the problems of SIMS. SNMS based on electron beam excited plasma (so called SNART: Sputtered Neutral Analysis-Riken Type) has several advantages; the high detection sensitivity with a high post ionization efficiency, the high depth resolution with low energy sputtering less than 100eV keeping a high sputtering rate, the relatively simple structure of the apparatus, the small dispersion of relative elemental sensitivity factors and the capability of insulator analysis without a charge neutralizer. In this study we attempted to improve the apparatus so as to obtain a higher sensitivity with maintaining a high depth resolution of around 1 nm. For this purpose, we have adopted a ToF mass spectrometer and made the plasma source be able to work in UHV. Detection sensitivities for metal surfaces were estimated to be less than 1 at.ppm keeping the high depth resolution on the basis of our preliminary experimental results of a sputtering rate, a post-ionization efficiency, a transmission of the ion optics and a total gain of the detection system. We will report our hardware development and results of experimental data compared with the estimated numbers.