AVS 49th International Symposium
    Applied Surface Science Monday Sessions
       Session AS-MoA

Paper AS-MoA9
Elementary and Structure Analysis of Si Wafers and Thin Films by Using an X-ray Waveguide-Resonator

Monday, November 4, 2002, 4:40 pm, Room C-106

Session: Quantification & Accuracy in Surface Analysis
Presenter: V.K. Egorov, Russian Academy of Science (IPMT RAS), Russia
Authors: V.K. Egorov, Russian Academy of Science (IPMT RAS), Russia
E.V. Egorov, Russian Academy of Science (IPMT RAS), Russia
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Analysis of composition and structure for Si wafers surface and thin films is carried out at X-ray beam grazing incidence (TXRF, GIRD). The methods fulfillment requires creation of an X-ray line beam with small width, low divergence and high radiation density. Monochromatization of the beam is nonobligatory demand. Such X-ray beam is formed indeed by planar X-ray waveguide-resonator (PXWR).@footnote 1@ PXWR is the narrow extensive slit formed by two planes polished dielectric reflectors. The slit size must fall into the certain size interval. At quartz reflectors intervals for MoK@alpha@ and CuK@alpha@ are limited by sizes: 15-45 nm and 15-95 nm. Waveguides capture radiation in the angle aperture @Delta@@theta@<2@theta@@sub c@, where @theta@@sub c@ is the total reflection critical angle. Realistic emergent beams have width 50-100 nm, hight 1-10 mm, divergence @Delta@@theta@<2@theta@@sub c@ and radiation density exceeded one in standard formed beam systems by 3-4 orders. Composite PXWR has the emergent beam divergence @Delta@@theta@<<2@theta@@sub c@ at preservation of a total intensity. Schemes of diffractive and spectroscopic devices equipped by PXWR are considered. Data for X-ray beam diffraction on thin films at its grazing incidence and for focusing scattering scheme are presented. There are discussed X-ray fluorescence spectra collected at the grazing incidence on film targets of beams formed by PXWR. The model for the spectrum treatment taking into account PXWR using for the target excitation is formulated. PXWR application leads to falling of element detection limit more than one order in comparison of the standard TXRF spectrometer scheme. TXRF device with PXWR is more cheap, more simple in exploitation. PXWR can be used for TXRF study of Si wafers with d>300 mm and adapted for "in situ" measurements. @FootnoteText@@footnote 1@V.K. Egorov, E.V. Egorov, T.V. Bil'chik, Investigation in Russia, v3, pp. 423-441 (2002). http://zhurnal.ape.relarn.ru/articles/2002/040e.pdf.