IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Tuesday Sessions

Session SS1-TuP
Semiconductor Surfaces Poster Session

Tuesday, October 30, 2001, 5:30 pm, Room 134/135


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

SS1-TuP3
Reduction of Oxidation Rate during the Initial Stages of the Oxidation of Heavily Phosphorus Doped Silicon in Dry Oxygen
Y. Kamiura, K. Hasegawa, Y. Mizokawa, Osaka Prefecture University, Japan, K. Kawamoto, Denso Co. Ltd., Japan
SS1-TuP5
The Investigation of the Semiconductors Surfaces by Method of the Low Energy Ion Scattering
U. Kutliev, B. Kalandarov, Urgench State University, Uzbekistan
SS1-TuP6
Femtosecond Time-Resolved Photoemission Study of Two-Dimensional Layered Semiconductor MoS@sub 2@ Surface
A. Tanaka, Tohoku University, Japan and University of Rochester, N.J. Watkins, Y. Gao, University of Rochester