IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Tuesday Sessions
       Session SS1-TuP

Paper SS1-TuP5
The Investigation of the Semiconductors Surfaces by Method of the Low Energy Ion Scattering

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Semiconductor Surfaces Poster Session
Presenter: U. Kutliev, Urgench State University, Uzbekistan
Authors: U. Kutliev, Urgench State University, Uzbekistan
B. Kalandarov, Urgench State University, Uzbekistan
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In the present work the scattering processes of 5 keV Ne @super +@ ions on the GaP(100) surface under grazing ion bombardment have been investigated by computer simulation in the binary collision approximation. The particle interaction were described by the universal BZL-potential. Elastic and inelastic energy losses of scattered ions were summed along their trajectories. Trajectories of incident ions experienced correlated sliding scattering on discrete atomic chains, in semichannels and channels in the <110>, <-100> directions were traced in several nearest to surface atomic layers. The monoatomic steps of the different length, one atomic layer high on the surface were simulated. Energy, angular and spatial distributions of Ne @super +@ ions scattered from stepped GaP(100) surface at different crystal directions were calculated. The computer simulation allowed an investigation of the effect of the atomic steps on the real single crystal surface upon the trajectory features and capture in subsurface channeling and dechallening of the ions being scattered on the surface. It has been shown that the presence of atomic steps on the surface lead to increase of the capture probability of channeling ions in the layers under the steps and to increase of probability of their dechanneling. Character of ions movement under the step (their range, energy losses and dechanneling) is determined both the grazing angle and capture angle under the step.