IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11), Session SC-TuM

IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
Semiconductors	Tuesday Sessions

Session SC-TuM
Semiconductor Interfaces and Thin Films

Tuesday, October 30, 2001, 8:20 am, Room 124
Moderator: L.J. Brillson, The Ohio State University

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Click a paper to see the details. Presenters are shown in bold type.

8:20am	SC-TuM1 Invited Paper Nanometer-scale Studies of Possible Dislocation Charging at GaN Interfaces J.P. Pelz, H.-J. Im, Y. Ding, E.R. Heller, The Ohio State University, B. Heying, J.S. Speck, University of California, Santa Barbara, W.J. Choyke, University of Pittsburgh
9:00am	SC-TuM3 Nanometer-scale Studies of Phase Separation in Compound Semiconductor Alloys B. Shin, A. Lin, K. Lappo, R.S. Goldman, University of Michigan, M.C. Hanna, S. Francoeur, A.G. Norman, A. Mascarenhas, National Renewable Energy Laboratory
9:20am	SC-TuM4 Scanning Tunneling Spectroscopy on Adsorbate Induced Two Dimensional Electron Systems on InAs(110) J. Klijn, M. Morgenstern, Chr. Meyer, D. Haude, R. Wiesendanger, Hamburg University, Germany
9:40am	SC-TuM5 InAs Surface Passivation for Electronics and Biosensors D.Y. Petrovykh, University of Maryland, College Park, M.J. Yang, L.J. Whitman, Naval Research Laboratory
10:00am	SC-TuM6 Formation of Co Silicides on Si@sub 0.7@Ge@sub 0.3@ Layer in the Presence of Thin Interposing Au Layer and Capping Ti Layer W.W. Wu, T.F. Chiang, S.L. Cheng, H.H. Lin, L.J. Chen, National Tsing Hua University, Taiwan, R.O.C., H.H. Cheng, Y.H. Peng, National Taiwan University, Taiwan, R.O.C.
10:20am	SC-TuM7 Intrinsic Defects of Cl-doped ZnSe Epitaxial Layers Examined by Photothermal Spectroscopy K. Yoshino, Miyazaki University, Japan, M. Yoneta, K. Ohimori, H. Saito, M. Ohishi, Okayama University of Science, Japan
10:40am	SC-TuM8 Metal-Induced States and Polytype Transformations at SiC Interfaces S.P. Tumakha, L.J. Brillson, G.H. Jessen, Ohio State University, R.S. Okojie, D. Lukco, NASA-Glenn Research Center
11:00am	SC-TuM9 Growth and Electrical Characterization of Ultra-Dense Phosphorous Delta-Doping Layers in Silicon T.-C. Shen, J.-Y. Ji, Utah State University, M. Zudov, R.-R. Du, University of Utah, J.S. Kline, J.R. Tucker, University of Illinois