IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Semiconductors Tuesday Sessions
       Session SC-TuM

Paper SC-TuM7
Intrinsic Defects of Cl-doped ZnSe Epitaxial Layers Examined by Photothermal Spectroscopy

Tuesday, October 30, 2001, 10:20 am, Room 124

Session: Semiconductor Interfaces and Thin Films
Presenter: K. Yoshino, Miyazaki University, Japan
Authors: K. Yoshino, Miyazaki University, Japan
M. Yoneta, Okayama University of Science, Japan
K. Ohimori, Okayama University of Science, Japan
H. Saito, Okayama University of Science, Japan
M. Ohishi, Okayama University of Science, Japan
Correspondent: Click to Email
Photothermal (PT) measurements have recently been carried out as one of the new methods to study the physical properties of semiconductors. One of the great advantages of the PT measurements is that the nonradiative carrier recombination processes are measured directly. Therefore, the PT may complement a photoluminescence (PL) and PL excitation (PLE). Furthermore, the PT also is much easier than deep-level transient-capacitance spectroscopy (DLTS) since no electrodes are needed in the PT system. In our previous paper,@footnote 1@ the PT measurements were carried out for nondoped and N-doped ZnSe epitaxial layers grown by molecular beam epitaxy (MBE), and we obtained the nonradiative carrier recombination centers in those samples. In this paper, we carried out the PT and PL measurements on Cl-doped ZnSe epitaxial layers from 80 to 300 K. The net carrier concentration is from 5.8 ´ 10 @super 17@ to 2 ´ 10@super 18 cm@super 3@. Three distinct peaks correspond to bandgap energy of ZnSe and two kinds of Cl related centers are observed. The activation energies of the Cl defects are estimated to be about 25 and 250 meV. The energy of 25 meV is known to be an activation energy of Cl atom in the Se site and the energy of 250 meV is not unknown. The emission due to the deep defect is not observed in the PL spectrum. Therefore, it indicates the defect with an activation energy of 250 meV acts the nonradiative carrier recombination center. @FootnoteText@ @footnote 1@ K. Yoshino et al., J. Crystal Growth 214&215 (2000) 572.