| IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11) | |
| Plasma Science | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS1-WeM1 Plasma Etching of High Dielectric Constant Materials L. Sha, J.P. Chang, University of California, Los Angeles |
| 8:40am | PS1-WeM2 Low-k Etch Selectivity Enhancement Through Ion Energy Control R. Silapunt, A.E. Wendt, University of Wisconsin-Madison, K.H.R. Kirmse, F.G. Celii, Texas Instruments, Inc. |
| 9:00am | PS1-WeM3 Organic Low-k Film Etching in Inductively Coupled Plasma Employing N@sub 2@/H@sub 2@ and N@sub 2@/NH@sub 3@ Gases H. Nagai, Nagoya University, Japan, M. Hiramatsu, Meijo University, Japan, M. Hori, T. Goto, Nagoya University, Japan |
| 9:20am | PS1-WeM4 Study of Surface Reaction on Organic Low-k Dielectric Etching By Plasma Beam Irradiation Y. Yamaoka, K. Kurihara, K. Karahashi, M. Sekine, M. Nakamura, ASET, Japan |
| 9:40am | PS1-WeM5 Low K Porous Silica Etch Behavior in Inductively Coupled Discharges M. Barela, H.M. Anderson, University of New Mexico |
| 10:20am | PS1-WeM7 Etching Mechanism in High-aspect-ratio Contact Hole Etching N. Negishi, M. Izawa, K. Yokogawa, Y. Momonoi, H. Kawahara, S. Tachi, Hitachi Ltd., Japan, J. Ghormley, Hitachi America Ltd. |
| 10:40am | PS1-WeM8 Optimization of a Nitride Etch Process Using Optical Detection of NO F.G. Celii, C. Huffman, Texas Instruments, Inc., J. Hosch, Verity Instruments |
| 11:00am | PS1-WeM9 Ultra High Selective Silicon Nitride Etching with a Downstream Remote Plasma using CF@sub 4@/O@sub 2@/CH@sub 2@F@sub 2@ S. Halle, K. Wilson, K. Settlemyer, IBM Microelectronics, H. Kimura, Shibaura Technology International Corp. |