Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | NT-WeM1 Invited Paper When are Carbon Nanotubes Ballistic Conductors? W.A. de Heer, Georgia Institute of Technology |
| 9:00am | NT-WeM3 Electrical Characterization of Carbon Nanotube - Metal Contacts R. Vajtai, B.-Q. Wei, Y.V. Shusterman, Rensselaer Polytechnic Institute, K.A. Dunn, K. Dovidenko, The University at Albany-SUNY, L.J. Schowalter, P.M. Ajayan, Rensselaer Polytechnic Institute |
| 9:20am | NT-WeM4 Analysis of Carbon Nanotube Metal-Semiconductor Diode Device T. Yamada, NASA Ames Research Center |
| 9:40am | NT-WeM5 Electrical Transport through Vertically Aligned In-situ Contacted Multiwall Carbon Nanotubes F. Kreupl, A. Graham, E. Unger, M. Liebau, W. Hönlein, Infineon Technologies, Corporate Research, Germany |
| 10:00am | NT-WeM6 Electronic Rectification, Ballistic Switching, and Logic Gates with Carbon Nanotube `Y-Junctions' D. Srivastava, NASA Ames Research Center, A. Andriotis, Foundation for Research and Technology, Greece, M. Menon, University of Kentucky, L. Chernozetonski, Russian Academy of Sciences |
| 10:20am | NT-WeM7 Development of N-type Carbon Nanotube Transistors and Fabrication of the First Nanotube Logic Circuits V. Derycke, R. Martel, Ph. Avouris, IBM T.J. Watson Research Center |
| 11:00am | NT-WeM9 Contacting Carbon Nanotubes by Electrodeposition of Metal D.W. Austin, M.A. Guillorn, University of Tennessee, D.B. Geohegan, Oak Ridge National Laboratory, A.A. Puretzky, University of Tennessee, P.F. Britt, M.L. Simpson, Oak Ridge National Laboratory |