IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Nanotubes: Science and Applications Topical Conference Wednesday Sessions
       Session NT-WeM

Paper NT-WeM6
Electronic Rectification, Ballistic Switching, and Logic Gates with Carbon Nanotube `Y-Junctions'

Wednesday, October 31, 2001, 10:00 am, Room 133

Session: Nanotubes: Nanoelectronics
Presenter: D. Srivastava, NASA Ames Research Center
Authors: D. Srivastava, NASA Ames Research Center
A. Andriotis, Foundation for Research and Technology, Greece
M. Menon, University of Kentucky
L. Chernozetonski, Russian Academy of Sciences
Correspondent: Click to Email
I-V characteristics of single-wall carbon nanotube Y-junctions are calculated using an efficient embedding Green's Function formalism that allows for conductance across nanotube multiple junctions and realistic nanotube metal-lead contacts. The current vs voltage characteristics show the assymetry and rectification, in agreement with recent experimental results on multiwall nanotube Y-junctions. In symmetric Y-nanotube junctions the rectification has a weak dependence on the angle at the junction, and can support both ballistic rectification and/or ballistic switching operating modes. Although structural symmetry of the Y-junction is found to be necessary condition for rectification, it may not be sufficient for all cases. Transport calculations as a 3-terminal device show modulation of the current in the bias channel and a branch as a fucntion of applied voltage across the other branch. This behavior has been exploited to propose simple logic gates with Y junction carbon nanotubes.