Click a paper to see the details. Presenters are shown in bold type.
| MS-MoP1 Investigations on Post Cu CMP Cleaning of Colloidal Silica Slurry T.-C. Wang, T.E. Hsieh, S.-Y. Chiu, National Chiao Tung University, Taiwan, R.O.C., Y.-L. Wang, Taiwan Semiconductor Manufacturing Company, J.J. Chang, National Chiao Tung University, Taiwan, R.O.C., Y.-N. Shieh, Chang Chun Petrochemical Co., Ltd., Taiwan |
| MS-MoP2 In-Situ EIS Approaches to the Copper CMP Slurry Characterization S.-Y. Chiu, National Chiao Tung University, Taiwan, R. O. C., J.-W. Hsu, Y.L. Tasi, National Tsing Hua University, Taiwan, R. O. C., Y.-L. Wang, Institute of Materials Science and Engineering, Taiwan, R. O. C., M.-S. Tsai, National Nano Device Laboratories, Taiwan, R. O. C., H.C. Shih, National Tsing Hua University, Taiwan, R. O. C., M.-S. Feng, National Chiao Tung University, Taiwan, R. O. C. |
| MS-MoP4 Line Type SAC with Oxide Spacer(LSOS) Adopting Flowfill Oxide for 0.10µm Design Rule and Beyond S.C. Park, S.D. Lee, S.T. Ahn, J.C. Ku, D.S. Kim, J.W. Kim, H.K. Yoon, Hynix Semiconductor, Inc., Korea |
| MS-MoP5 Application of Plasma V@sub dc@ Bias Diagnostics Cathode For Device Charging Damage Optimization S. Ma, Applied Materials, K. Horioka, Applied Materials, Japan, R. Lindley, K. Doan, S. Kats, M. Dahimene, Y. Xia, H. Shan, Applied Materials |