IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Manufacturing Science and Technology Monday Sessions
       Session MS-MoP

Paper MS-MoP1
Investigations on Post Cu CMP Cleaning of Colloidal Silica Slurry

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: Aspects of Manufacturing Science and Technology Poster Session
Presenter: Y.-L. Wang, Taiwan Semiconductor Manufacturing Company
Authors: T.-C. Wang, National Chiao Tung University, Taiwan, R.O.C.
T.E. Hsieh, National Chiao Tung University, Taiwan, R.O.C.
S.-Y. Chiu, National Chiao Tung University, Taiwan, R.O.C.
Y.-L. Wang, Taiwan Semiconductor Manufacturing Company
J.J. Chang, National Chiao Tung University, Taiwan, R.O.C.
Y.-N. Shieh, Chang Chun Petrochemical Co., Ltd., Taiwan
Correspondent: Click to Email
Chemical mechanical polishing (CMP) is the only way to achieve the global planarization in copper damascene process. In addition to complex consumables and process controls, one of the key issues in mass manufacturing using CMP technology is post-CMP cleaning. In this study, novel clean solutions for efficient removal of colloidal silica from polished copper line were proposed. There were three kinds of formulated post Cu CMP cleaning solutions carried out including PVA, Dextrose and D-sorbitiol aqueous solution. Cleaning with these chemistries was able to change the character of the colloidal silica abrasive surface and eliminate the strong tendency of the absorption of colloidal silica on copper line. From the SEM images of polished copper surface, abrasive-free Cu surface could be obtained. Besides, the surface-scan for defect analysis performed a different level for Cu CMP post-clean efficiency. In addition, the electrical analyses for polished pattern wafers cleaning were evaluated to verify the performance of these formulated clean solutions.