| IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11) | |
| Electronics | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | EL-WeM1 Invited Paper Step Motion and Morphology on Si(111) M.S. Altman, Hong Kong University of Science and Technology |
| 9:00am | EL-WeM3 Step Fluctuations on a Chemically Heterogeneous Surface: Al/Si(111)-(@sr@3x@sr@3)@footnote 1@ I. Lyubinetsky, D.B. Dougherty, E.D. Williams, University of Maryland at College Park |
| 9:20am | EL-WeM4 Atomic and Electronic Structure of Si Layers on CaF@sub 2@/Si(111) A.A. Bostwick, J.A. Adams, University of Washington, E. Rotenberg, Advanced Light Source, Berkeley, M.A. Olmstead, University of Washington |
| 9:40am | EL-WeM5 Surface Mass Transport and Island Nucleation during Growth of Ge on Laser Textured Si(001) T. Schwarz-Selinger, Max Planck Institut für Plasmaphysik, Germany, D.G. Cahill, University of Illinois, Urbana |
| 10:00am | EL-WeM6 Non-thermal SiO@sub 2@ Film Growth on Si(100) using Laser-generated O(@super 1@D) and O(@super 3@P) T.C. Coulter, A.C. Tuan, University of Washington, W.P. Hess, J.W. Rogers, Jr, Pacific Northwest National Laboratory, Y. Ono, Sharp Labs of America |
| 10:20am | EL-WeM7 On the Use of Angle-resolved XPS for Resolving Composition Structure of Ultrathin Inhomogeneous Oxide Layers T. Conard, H. De Witte, W. Vandervorst, J. Petry, IMEC, Belgium, R. White, K.S. Robinson, Thermo VGScientific, UK |
| 11:00am | EL-WeM9 Silicon-Oxide Formation on Gold T. Vdovenkova, A.J. Slavin, Trent University, Canada |
| 11:20am | EL-WeM10 Kinetics of the Selective Oxidation of Si(100) versus W by H@sub 2@O Steam in Hydrogen Y. Liu, J. Hebb, Axcelis Technologies, Inc. |