IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Wednesday Sessions
       Session EL-WeM

Paper EL-WeM4
Atomic and Electronic Structure of Si Layers on CaF@sub 2@/Si(111)

Wednesday, October 31, 2001, 9:20 am, Room 124

Session: Si Surface Dynamics and Reactions
Presenter: A.A. Bostwick, University of Washington
Authors: A.A. Bostwick, University of Washington
J.A. Adams, University of Washington
E. Rotenberg, Advanced Light Source, Berkeley
M.A. Olmstead, University of Washington
Correspondent: Click to Email
Many forms of nanocrystalline silicon have been observed to luminesce at room temperature under photon or electron excitation. However, the relative importance of electron confinement and interface compounds is still an open question for many of these materials. Our group recently developed a means to fabricate ultrathin, crystalline, arsenic-terminated silicon quantum wells on calcium fluoride using electron irradiation in the presence of an arsenic surfactant flux.@footnote 1@ With no intrinsic oxygen and a well-defined surface and interface structure, these films make excellent candidates for probing the properties of oxygen-free silicon nanostructures. We have studied such films with angle-resolved valence band and core-level photoemission spectroscopy and diffraction and near-edge xray absorption spectroscopy. Our initial studies show no surface states in the bulk Si energy gap and a flat, weakly dispersing density of valence states. We also discuss growth mechanisms for these films, which are sensitive to the irradiation and arsenic exposure conditions. @FootnoteText@ @footnote 1@ B. R. Schroeder, S. Meng and M. A. Olmstead, Appl. Phys. Lett. 77, 1289 (2000).