| IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11) | |
| Dielectrics | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | DI-TuM1 Invited Paper Vibrational and Band-Gap Engineering of Transition Metal Oxides for High-k Gate Applications S. Zollner, R. Liu, Motorola SPS |
| 9:00am | DI-TuM3 Electrical and Physical Characteristics of Sputtered HfO@sub 2@ Films for Alternative Gate Dielectrics S.-W. Nam, J.-H. Yoo, H.-J. Choi, S. Nam, D.-H. Ko, Yonsei University, Korea, J.-H. Ku, R&D Center Semiconductor Samsung Electronics Co., Korea, M.-H. Cho, Yonsei University, Korea, S. Choi, R&D Center Semiconductor Samsung Electronics Co., Korea, C.-W. Yang, Sungkyunkwan University, Korea |
| 9:40am | DI-TuM5 Solid State Reactions in Hafnium Silicate Thin Films H.T. Johnson-Steigelman, A.V. Brinck, P.F. Lyman, University of Wisconsin-Milwaukee |
| 10:00am | DI-TuM6 Kinetic Study on ZrO@sub 2@-CVD using Zirconium-Tetra-tertiary-Butoxide T. Kawamoto, Y. Shimogaki, University of Tokyo, Japan |
| 10:40am | DI-TuM8 Correlations Between Local Bonding and Electronic Structure, and Gate Dielectric Performance of Zirconium Silicate Alloys G. Rayner, Jr., D. Kang, M. Schultz, G. Appel, G. Lucovsky, H. Ade, D.E. Aspnes, D.E. Sayers, North Carolina State University |
| 11:20am | DI-TuM10 Interface Reactions of High-K Y@sub 2@O@sub 3@ and Gd@sub 2@O@sub 3@ Gate Oxides with Si B.W. Busch, Agere Systems, W.H. Schulte, Rutgers University, R. Kwo, M. Hong, J.P. Mannaerts, B.J. Sapjeta, Agere Systems, T. Gustafsson, E. Garfunkel, Rutgers University |