Recent advances in physical vapor deposition (PVD) equipment have enabled 0.13-micron and smaller semiconductor device geometries, while also supporting technology transitions from traditional aluminum interconnects to copper, as well as wafer size transitions from 200 mm to 300 mm. Evolutions in PVD system architecture and wafer flow that enable high productivity, as well as incorporation of new technologies such as ionized PVD, and CVD are discussed. In addition, recent developments in sputter source technology will also be discussed. Selected process applications and results are presented to illustrate PVD extendibility to future technology nodes.