IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Wednesday Sessions
       Session TF-WeM

Paper TF-WeM10
In-Situ Determination of the Deposition Chemistry During BPSG Dielectric Thin Film Growth

Wednesday, October 31, 2001, 11:20 am, Room 123

Session: Fundamentals of Deposition
Presenter: L.D. Flores, University of California, San Diego
Authors: L.D. Flores, University of California, San Diego
J.E. Crowell, University of California, San Diego
Correspondent: Click to Email
Dielectric thin film growth of boron and phosphorus doped silicate glass (BPSG) has been studied using the atmospheric pressure reaction between trimethylborate (TMB), triethylphosphite (TEPi), tetraethoxysilane (TEOS) and ozone (O@sub 3@). In-situ gas-phase transmission FTIR spectroscopy was performed between 400-600°C by probing the variable region between the injector, heated Si wafer and exhaust zones. These studies involve low temperature ozone initiated deposition of dielectric thin films using a new atmospheric-pressure chemical vapor deposition (APCVD) reactor utilizing a commercial monoblok vent assembly. We compare the products of N@sub 2@ / O@sub 2@ / O@sub 3@ reactions with BPSG film forming precursors while varying their reactant ratios and corresponding flow rates. The products produced during the reaction of TEOS and ozone are compared to those products measured during dopant reaction and incorporation from TMB and/or TMPi addition. Absorbances due to isolated silanol species (3737 cm@sup -1@) have been quantitatively followed as a function of input reagent concentration and distance from the injector inlet. The silanol groups and their reactions with boron and phosphorus dopant sources has been investigated in order to clarify their role in the oxidation process and to determine the reaction mechanism. Chemical pathways unique to elemental B-P-Si-O-C containing species will be presented with an emphasis placed on their role during the hydrolysis and polycondensation process leading to siloxane formation and BPSG network film growth.