IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Tuesday Sessions
       Session TF-TuM

Paper TF-TuM8
Electrical Characteristics and Growth of ZrO@sub2@ as a Gate Dielectric

Tuesday, October 30, 2001, 10:40 am, Room 123

Session: Optical Thin Films
Presenter: Y. Kim, Hanyang University, Korea
Authors: Y. Kim, Hanyang University, Korea
Y. Kim, Hanyang University, Korea
H. Jeon, Hanyang University, Korea
Correspondent: Click to Email
We have studied ZrO@sub 2@ thin film as an alternative gate dielectric. It was deposited on a Si substrate by RF reactive sputtering system which was optimized to achieve high quality thin film. O@sub 2@ flow and power were modulated to control the interface quality and growth rate. This ZrO@sub 2@ thin film was annealed from 600 °C to 900 °C for 30 sec with rapid thermal annealing (RTA).@footnote 1@ Pt was deposited as a top electrode for metal-oxide-semiconductor (MOS) capacitor by ultra high vacuum evaporation system and this capacitor was annealed at 450 °C for 30 sec with RTA in H@sub 2@ + N@sub 2@ ambient. Capacitance-voltage measurements showed an equivalent oxide thickness of less than 30 Å with no significant dispersion of the capacitance for 1MHz frequency. Current-voltage measurements exhibited the low leakage current at -1.0V. Hysteresis shift in these films was measured to be less than 100mV. Interface state density and reliability were measured. We examined cross-sectional transmission electron microscopy and X-ray diffraction to observe reaction and crystallization of zirconium oxide.@footnote 2@ We also examined the zirconium oxide formation depending on the annealing temperature by in-situ Auger electron spectroscopy system connected with ultrahigh vacuum furnace. @FootnoteText@ @footnote 1@B. H. Lee, L. Kang, R. Nieh, W. Qi, and J. C. Lee, Appl. Phys. Lett., vol. 76, p. 1927, Apr. 2000. @footnote 2@G. D. Wilk and R. M. Wallace Appl. Phys. Lett., vol. 76 p. 112, Jan. 2000.