IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Thursday Sessions
       Session TF-ThP

Paper TF-ThP7
Copper Metallization for ULSI Using 90°-bend Magnetic Filtered Cathodic Arc Evaporation Plasma System

Thursday, November 1, 2001, 5:30 pm, Room 134/135

Session: Thin Film Deposition/Carbon-Containing Films Poster Session
Presenter: J.-H. Lin, National Tsing Hua University, Taiwan
Authors: J.-H. Lin, National Tsing Hua University, Taiwan
U.-S. Chen, National Tsing Hua University, Taiwan
W.-J. Hsieh, National Tsing Hua University, Taiwan
H.C. Shih, National Tsing Hua University, Taiwan
Correspondent: Click to Email
The cathodic arc evaporation plasma generated the highest plasma density compared with other PVD systems, but is known to be contaminated with macroparticles. In order to produce high quality defect-free copper films, a 90X-bend magnetic filter is suitable for ULSI interconnects metallization application. Macroparticle contamination has been alleviated by magnetic filter, the copper ions in the fully ionized copper plasma were accelerated and deposited on the wafer with a negative pulsed bias voltage. The fully ionized copper plasma flux was highly directionally deposited on the patterned and blank wafers, the filling of trenches/vias as narrow as 0.2 µm, with an aspect ratio as high as 7, FESEM and TEM images showed conformable copper step coverage ability. Both XRD and SEM/EBSD spectra showed that the FCAE-deposited copper film has an obvious Cu(111) preferred orientation. The result of this process as made, by scratch tests, showed that higher substrate bias and 50% pulse bias duty cycle can effectively enhance the adhesion strength of copper film on TaN layer.