IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Thursday Sessions
       Session TF-ThP

Paper TF-ThP5
Oxygen Partial Pressure Effect on the Properties of the Novel Semiconducting Alloy Cu@sub x@Cd@sub 1-x@Te Grown by rf Sputtering

Thursday, November 1, 2001, 5:30 pm, Room 134/135

Session: Thin Film Deposition/Carbon-Containing Films Poster Session
Presenter: G. Torres-Delgado, Cinvestav-IPN, Unidad Querétaro, Mexico
Authors: J. Santos-Cruz, Cinvestav-IPN, Unidad Querétaro, Mexico
G. Torres-Delgado, Cinvestav-IPN, Unidad Querétaro, Mexico
O. Jiménez-Sandoval, Cinvestav-IPN, Unidad Querétaro, Mexico
R. Castanedo-Pérez, Cinvestav-IPN, Unidad Querétaro, Mexico
B.S. Chao, Energy Conversion Devices, Inc.
P. García-Jiménez, Cinvestav-IPN, Unidad Querétaro, Mexico
S. Jiménez-Sandoval, Cinvestav-IPN, Unidad Querétaro, Mexico
Correspondent: Click to Email

High quality thin films of the novel semiconductor alloy Cu@sub x@Cd@sub 1-x@Te have been succesfully grown by rf sputtering from a single target made of a mixture of high purity Cu and CdTe powders.@footnote 1@ Micro Raman experiments carried out on the Cu powder particles showed the existence of a CuO overlayer. However, the presence of such oxide, or of oxygen molecules, have not been detected as important components in the films. The role that oxygen plays during the growth and properties of the Cu@sub x@Cd@sub 1-x@Te films is unknown to date. In this work we report the results of a study about the effects of incorporating controlled amounts of oxygen during the growth of Cu@sub x@Cd@sub 1-x@Te thin films, on their crystalline structure, composition, and optical and transport properties. This study was carried out in a two-target sputtering system, in which one target is made of Cu and the other of CdTe. The native oxide on the Cu target surface was removed previously by presputtering for a few minutes before opening the deposition shutters. The controlled incorporation of oxygen into the chamber was achieved by using an electronic mass flow controller and the elemental composition profiles obtained by Auger spectroscopy. @FootnoteText@ @footnote 1@J. Vac. Sci. Technol. A 17, 1958 (1999); Thin Solid Films 342, 1 (1999); Microelectronics Journal 31, 429 (2000).