IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Thursday Sessions
       Session TF-ThP

Paper TF-ThP24
Fabrication of Carbon Whisker Film Using RF Plasma CVD

Thursday, November 1, 2001, 5:30 pm, Room 134/135

Session: Thin Film Deposition/Carbon-Containing Films Poster Session
Presenter: K. Ito, Meijo University, Japan
Authors: K. Ito, Meijo University, Japan
K. Kato, Meijo University, Japan
M. Hiramatsu, Meijo University, Japan
M. Nawata, Meijo University, Japan
M. Hori, Nagoya University, Japan
C.H. Lau, University of Oxford, UK
J. Foord, University of Oxford, UK
Correspondent: Click to Email
In the case of film formation by utilizing the plasma enhanced chemical vapor deposition (PECVD) method, it is desirable to supply selectively reactive species suitable for the film growth onto the substrate. Previously we demonstrated the successful formation of diamond crystals using a unique PECVD system, which has the parallel-plate capacitively coupled radio-frequency (rf, 13.56 MHz) discharge plasma assisted by the hydrogen radical source using the remote microwave (2.45 GHz) discharge plasma.@footnote 1@ In the present work, by using this system with a mixture of C@sub 2@F@sub 6@ and H@sub 2@, carbon films with whisker array were successfully formed on Si (100) substrate at C@sub 2@F@sub 6@/H@sub 2@=0.3/13 Pa, rf power of 100W, microwave power of 100W, and substrate temperature of 600 °C. Deposited films were characterized by scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Although fluorocarbon gas was used as a source gas, fluorine was not detected in the deposited film from the XPS analysis. Surface morphology was changed from pyramids to whiskers according to the deposition conditions. Field emission characteristics have been investigated for the fabricated carbon film with whisker array. The V-I characteristics revealed a current density of 750 µmA/cm@super 2@ at an applied field of 60 V/µmm. Corresponding Fowler-Nordheim plot was well fitted by the straight line, indicating that the field emission property can be explained by a tunneling mechanism. @FootnoteText@ @footnote 1@M. Hiramatsu, M. Inayoshi, K. Yamada, E. Mizuno, M. Nawata, M. Ikeda, M. Hori, T. Goto, Rev. Sci. Instrum., 67 (1996) 2360.