IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Thursday Sessions
       Session TF-ThP

Paper TF-ThP22
Physical Properties of Nitrogen Doped Diamond-Like Amorphous Carbon Films Deposited by Supermagnetron Plasma CVD

Thursday, November 1, 2001, 5:30 pm, Room 134/135

Session: Thin Film Deposition/Carbon-Containing Films Poster Session
Presenter: H. Kinoshita, Shizuoka University, Japan
Authors: H. Kinoshita, Shizuoka University, Japan
N. Otaka, Shizuoka University, Japan
Correspondent: Click to Email
Diamond-like amorphous carbon films doped with nitrogen (DAC:N) were formed using a supermagnetron plasma chemical vapor deposition (CVD) method.@footnote 1@ The electrical conductive DAC:N films were studied for the fabrication of high performance field emitters. DAC:N films were deposited on Si and glass wafers intermittently using i-C@sub 4@H@sub 10@/N@sub 2@ repetitive plasma CVD. CVD duration was selected to be 40sec or 60sec, and several layers were deposited repetitively to form one film. Physical properties such as deposition rate, hardness, resistivity and optical band gap were measured at lower-electrode temperature of 100 °C as a function of upper- and lower-electrode rf powers (200W/200W-1kW/1kW) and N@sub 2@ concentration (0-80%). With increase of rf powers supplied to two electrodes, resistivity, hardness and optical band gap decreased monotonously. Refractive index, however, was almost constant to 2.0-2.1. With increase of N@sub 2@ concentration at rf powers of 1kW/1kW, deposition rate, hardness, resistivity and optical band gap decreased monotonously. With increase of plasma CVD duration from 40sec to 60sec, resistivity decreased to 0.032@ohm@cm and optical band gap decreased to 0.02eV, at N@sub 2@ concentration of 80%. FT-IR spectroscopy measurements revealed that, with increase of N@sub 2@ concentration, absorption peak intensities of NH single and CN triple bonds increased and that of CH single bond decreased. @FootnoteText@@footnote 1@H.Kinoshita and M.Yoshida, J.Vac.Sci.Tecnol.A 19, July (2001).