IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Thursday Sessions
       Session TF-ThP

Paper TF-ThP16
Computer Modeling of Thin Metal Films for Advanced Devices

Thursday, November 1, 2001, 5:30 pm, Room 134/135

Session: Thin Film Deposition/Carbon-Containing Films Poster Session
Presenter: L He, San Jose State University
Correspondent: Click to Email
Computer simulation for semiconductor devices and process is becoming more and more important due to the high cost of device fabrication and processing. In recent years, semiconductor optoelectronic device has undergone explosive growth. This growth has fueled a vast expansion of device modeling and simulation. Low temperature (LT) process on metal thin film has been proven effective to increase Schottky barrier height and reduce film resistivity in recent study. For the potential application of LT process in advanced semiconductor devices, a computer simulation program is developed. The computer simulation focus on microstructure and electric properties of the thin metal films. Metal-semiconductor-metal (MSM) photodetectors are widely used in the optoelectronic integrated circuit receivers because of their compatibility with the preamplifier for their planar integration scheme, the minimum number of processing steps, high performance, and low cost. InGaAs/InP is chosen for long wavelength application. In this work, analysis based on the results of computer simulation is presented. The Ag/InGaAs/InP contact formed by LT process showed that the Schottky barrier height is as high as 0.64eV. This value is more than double of the barrier height when processed in room temperature. It is believed that the LT process could greatly enhance the performance of a MSM photodetector. The device simulation includes RC time simulation, frequency response, and efficiency analysis.