IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Thursday Sessions
       Session TF-ThP

Paper TF-ThP11
Deposition of Dielectric Films by Photo Chemical Vapor Deposition using Vacuum Ultraviolet Xe2 Excimer Lamp from Tetraethoxysilane

Thursday, November 1, 2001, 5:30 pm, Room 134/135

Session: Thin Film Deposition/Carbon-Containing Films Poster Session
Presenter: N. Horii, Fukui National College of Technology, Japan
Authors: N. Horii, Fukui National College of Technology, Japan
A. Inouye, Fukui National College of Technology, Japan
H. Nishibata, Fukui National College of Technology, Japan
K. Okimura, Tokai University, Japan
Correspondent: Click to Email
Dielectric films have deposited by photo-chemical vapor deposition (CVD) using Xe2 excimer lamp as a vacuum ultraviolet light source. Tetraethoxysilane was used as a silicon source. The goal of the research was to obtain insulation films for between layers in LSI fabrication and plasma free environment for sensitive substrate at low temperature. First, photo-chemical dissociation process of TEOS in the gas phase was investigated by in-situ mass spectrometry. We have found that TEOS was dissociated by VUV irradiation while releasing alkyl groups such as CxHy (x=1-2,y=2-5). Moreover, almost all Si-O bonds of TEOS were not broken at the energy of Xe2 excimer light. These are main reaction of the forming precursors for film deposition in the photo CVD process. A structure of films was investigated by FTIR analysis. The film prepared from TEOS at room temperature was SiOxCx like film having large amount of CH groups, however, Si-OH bonds was not included. Investigation of a stability of the films in ambient air was obtained undesirable results such as the Si-OH bonds increased and the film thickness decreased by the day. In order to improve a stability of the films we have irradiated VUV light to deposited films at room temperature. The result from the technique was effective for reducing unstable CH groups contained in the films and obtaining a good chemical and physical stability.