IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Thursday Sessions
       Session TF-ThA

Paper TF-ThA8
Low Temperature and Plasma Damage Free Deposition of Silicon Dioxide on Novel Film Deposition Method Called a Radical Shower-CVD (RS-CVD)

Thursday, November 1, 2001, 4:20 pm, Room 123

Session: Emerging Thin Film Techniques
Presenter: A. Kumagai, Anelva Corporation, Japan
Authors: A. Kumagai, Anelva Corporation, Japan
K. Ishibashi, Anelva Corporation, Japan
X. Ge, Anelva Corporation, Japan
M. Tanaka, Anelva Corporation, Japan
H. Nogami, Anelva Corporation, Japan
O. Okada, Anelva Corporation, Japan
Correspondent: Click to Email
A novel film deposition method called a Radical Shower-CVD (RS-CVD) has been developed for high quality gate-oxide film formation on low temperature Poly-Si TFT-LCD fabrication. RS-CVD has the advantages of both conventional plasma enhanced-CVD and remote plasma-CVD without having their disadvantages and is characterized by plasma damage free deposition on a large area substrate at a low temperature of about 300°C. As a silicon dioxide film is deposited on the substrate through the diffusion of SiO@sub2@ formed by the reaction of oxygen radical with SiH@sub4@ in the gas phase, oxygen radical quantity, distance from gas injection to substrate, and deposition pressure are very important as a control factor of gas phase reaction. Dependencies of film quality on those factors are investigated to confirm the optimization methods in RS-CVD film deposition process. The calculation of the gas phase elementally reaction have been performed to discussion the formation mechanisms of SiO@sub2@. As a result of this study, it was confirmed to be important in suppressing the contamination of the elements including the OH bonding groups in the films during the deposition itself. The oxygen radical quantity, the distance from gas injection to substrate, and the deposition pressure were useful to control the speed of overall reaction and the elements arriving at the substrate. It was important in the film properties to control the residence time of gases until they reach the substrate by adjusting those factors mutually.