IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Thursday Sessions
       Session TF-ThA

Paper TF-ThA4
High Rate Growth of Cu Thin Films Using New Magnetron Sputtering Source

Thursday, November 1, 2001, 3:00 pm, Room 123

Session: Emerging Thin Film Techniques
Presenter: J.-H. Boo, Sungkyunkwan University, Korea
Authors: H.K. Park, Sungkyunkwan University, Korea
K.H. Nam, Sungkyunkwan University, Korea
J.G. Han, Sungkyunkwan University, Korea
J.-H. Boo, Sungkyunkwan University, Korea
Correspondent: Click to Email
We have deposited the copper (Cu) thin films on Si(100) and stainless steel substrates in the growth temperature between room temperature and 500 °C using pulsed D. C. magnetron sputtering method. An unbalanced magnetron sputtering source with high current (20 - 120 mA/cm @super 2@) and low voltage (100 - 1000 eV) was designed and constructed for high rate deposition. Based upon the results of magnetic field simulation, we built-up the highest power (120 W/cm @super 2@) Cu magnetron sputtering source to enhance the sputtering yield and film growth rate. The maximum deposition rate and sputtering yield of the newly developed sputtering source are 2.8 µm/min. and 70%, respectively. When an ion extraction grid was adapted between the Cu target and substrate, however, the growth rate was increased over 3 µm/min. This is 10 times higher than that of conventional sputtering method, and the sputtering yield was also reached to 80% due to low voltage and high current Cu-accelerated ions. XRD and XPS showed that highly oriented polycrystalline Cu(111) thin films with no impurity were obtained on the stainless steel substrates. During film deposition, plasma diagnostics was also carried out in situ by optical emission spectroscopy analysis. Electrical conductivity was also measured with four-point probe method.