Lithographic cameras for the fabrication of circuits below 70 nm line width can not use lenses because no transparent material exists for the required short wavelengths in the ultraviolet. Extreme Ultraviolet (EUV) lithography with wavelengths around 13 nm using multilayer coated mirrors is a main contender for chips with line widths between 30 and 70 nm. Meeting the one Angstrom tolerances on the figure and smoothness of the optical surfaces before and after the multilayer deposition and controlling the profile of the multilayer period to better than 0.1 Angstrom has been a major challenge. The talk will give an update on the status of EUV lithography with emphasis on the fabrication, characterization and understanding of the required film deposition processes.