IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Wednesday Sessions
       Session SS1-WeA

Paper SS1-WeA10
Characterization of Structure Transition in Ion-Implanted Amorphous Silicon

Wednesday, October 31, 2001, 5:00 pm, Room 120

Session: New Opportunities in Surface Microscopy
Presenter: J.-Y. Cheng, University of Illinois at Urbana-Champaign
Authors: J.-Y. Cheng, University of Illinois at Urbana-Champaign
J.M. Gibson, Argonne National Laboratory
P.M. Baldo, Argonne National Laboratory
Correspondent: Click to Email
We use fluctuation electron microscopy to characterize disordered structures in silicon. In fluctuation electron microscopy, variance of dark-field image intensity contains the information of high-order atomic correlations, primarily in medium-range order length scale (1-3nm). In this study, amorphous silicon is produced by self-ion implantation of silicon at liquid nitrogen temprature, followed by annealing processes. As-implanted and annealed structures have been identified as paracrystalline structures and a continuous random network. However, the connection of structure transition to free energy release has not yet been fully understood. We will present new results from materials prepared by post-anneal He irradiation and post-He-bombardment annealing, and discuss effects of He implantation as the system evolves in consecutive treatments.