IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Wednesday Sessions
       Session SS1-WeA

Paper SS1-WeA1
Imaging with Helium Atoms: Developments in Scanning Atom Microscopy

Wednesday, October 31, 2001, 2:00 pm, Room 120

Session: New Opportunities in Surface Microscopy
Presenter: D.A. MacLaren, University of Cambridge, U.K.
Authors: D.A. MacLaren, University of Cambridge, U.K.
W. Allison, University of Cambridge, U.K.
Correspondent: Click to Email

We report on the preparation and production of ultra-smooth helium atom mirrors and on recent advances in the development of a Scanning Atom Microscope (SAM). A bent Si(111)-(1x1)H crystal is an ideal mirror for helium atoms and can be used as the focusing element of a SAM. @footnote 1@ Based upon a focused microprobe of thermal helium atoms, a SAM provides the opportunity for sub-micron, non-destructive and surface-sensitive imaging and could have a profound impact on surface science, particularly in studies of delicate organic systems. A low aberration, high intensity atom mirror requires control over both the macroscopic and microscopic surface properties. Our approach is to bend an ultrasmooth single crystal into the optimum macroscopic profile by application of precise electrostatic fields; we have demonstrated that aberration-free focusing is possible using this method.@footnote 2@ The atom mirror must also have a high helium reflectivity, which requires careful manipulation of the surface microstructure. Here, we discuss refinements to the ex-situ preparation of Si(111)-(1x1)H. Atomic Force Microscopy is used to study the kinetics of the etching mechanism used to produce the mirror surface. We show that small changes in miscut angle can alter the kinetic steady state to promote the formation of deep etch pits and stable self-aligned 'etch hillocks' on the micron scale. Our study has led to the production of surfaces that are homogeneous over tens of microns and which have substantially improved atom reflectivity. The results are a significant improvement in silicon preparation and are a crucial step in the development of a scanning atom microscope. @FootnoteText@ @footnote 1@ B. Holst and W. Allison, Nature (London) 286, (1997), 244. @footnote 2@ D.A. MacLaren, W. Allison and B. Holst, Rev. Sci. Instrum. 71, (2000), 2625.