IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Engineering Monday Sessions
       Session SE-MoA

Paper SE-MoA8
Formation of Voids and its Influence on the Thermal Stability of Co Silicide

Monday, October 29, 2001, 4:20 pm, Room 132

Session: Surface Engineering I: Graded, Multicomponent, and Complex Coatings
Presenter: N.S. Kim, Hynix Semiconductor, Korea
Authors: N.S. Kim, Hynix Semiconductor, Korea
H.S. Cha, Hynix Semiconductor, Korea
N.G. Sung, Hynix Semiconductor, Korea
H.H. Ryu, Hynix Semiconductor, Korea
W.G. Lee, Hynix Semiconductor, Korea
Correspondent: Click to Email
We investigated the voids formation during Co silicidation and its influence on the thermal stability of CoSi@sub 2@ on boron or BF@sub 2@-doped poly-Si in ULSI device. The sheet resistance of as-formed CoSi@sub 2@ has been slightly higher on BF@sub 2@ doped poly-Si than boron doped poly-Si, but the sheet resistance of CoSi@sub 2@ on boron doped poly-Si after thermal process increased abruptly. Cross-sectional TEM has shown local voids at the interface between CoSi@sub 2@ and BF@sub 2@ doped poly-Si, but no void on boron doped poly-Si. Furthermore, as pre-cleaning time in diluted HF before Co deposition increased, sheet resistance of as-formed CoSi@sub 2@ decreased and void formation on BF@sub 2@ doped poly-Si was suppressed, but thermal stability of CoSi@sub 2@ after following thermal process was aggravated. From those results, It was thought that the thermal agglomeration of CoSi@sub 2@ was suppressed by stress release at the interface with local voids formed by remained oxide and some florine compounds on the surface of BF@sub 2@ doped poly-Si.