Recent progress in bonding and thin-layer splitting enables a new approach to integrate dissimilar thin-film electronic materials. The transfer process incorporates the bonding of two substrates and the use of an ion-cut technique to separate thin films of semiconductors onto various receptor substrates. This paste-and-cut method is an appealing alternative to heterogeneous epitaxial growth approaches because each material layer for a given function can be grown/fabricated on an ideally suited substrate and then combined with a dissimilar receptor substrate. Plasma activated direct bonding and plasma implantation are two key process modules for the success of the layer transfer approach. We will present both low-temperature bonding results using plasma surface activation and ion-cut results using plasma implantation. Material systems such as silicon-on-insulator, III-V semiconductors, and MEMS will be used as examples to illustrate versatility of this approach. Transfer of patterned materials and prefabricated devices have also been proven successful using this technique. * Supported in part by the California SMART Program and National Science Foundation XYZ-on-a-Chip Program.